6N60 to-263/d pak to-262/i pak to-262/i pak to-263/d pak 6N60 pin assig n men t ordering n um ber power mosfet 1. ga te 3.source 2.drai n ? ordering information package 1 2 3 t o -220 g d s ito-220/to-220f g d s g d s g d s note: pin assignment: g: ga te d: drain s: source 6n65 6N60 6n65 1 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 6N60 6n65 1 to-220 1 2 2 2 2 ? description have be tter characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in switching power supplies and adaptors. ? features * r ds(on) = 1.5 ? @v gs = 10v * ultra low g ate charge (typical 20 nc ) * low reverse transfer capacitance ( c rss = ty pi ca l 10pf ) * fast switching capability * avalanche energy tested * improved dv/dt capability, high ruggedness ? sy mbol 6n65 is a high vo ltage mosfet and is designed to par t no. package packing 6 -tu to-220 6 tu 50pcs / tube 6 tu to-2 62 50pcs / tube 6 -tu to-263 50pcs / tube 6 -tr to-263 800pcs / 13" reel ito-220/to-220f 50pcs / tube n6* n6* n6* n6* n6* ito-220/to-220f 6.0 amps, 600/650 volts n-channel power mosfet a l l d a t a s h e e t
power m o sfet 6N60 6n65 2 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 6N60 6n65 55 w 40 w ? absolute maximu m ra tings ( t c = 25 , unless otherw i se specified) parameter symbol ratings unit drain-source voltag e v dss 650 v gate-source vo ltag e v gss 30 v avalanche c u rrent (note 2) i ar 6.0 a continuo us i d 6.0 a drain cu rrent pulsed (note 2 ) i dm 24.8 a single puls ed ( note 3) e as 440 mj aval an che energy repetitive (not e 2) e ar 13 mj peak diode r e covery dv/dt (note 4) dv/dt 4.5 v/ns to -220 125 w pow e r dissipation p d ( t c = 25 ) junction t emperature t j +150 ambient opera t ing temperature t opr -55 ~ + 150 storage temperature t st g -55 ~ +150 notes: 1. absol ute maximum ratings are those values be yo nd which the device could be permanently damaged. absolute ma ximum ratings are stress ratings only and functional device oper ation is not im plied. 2. repetitiv e rating : pulse width limited by t j 3. l= 64mh, i as =6.0a, v dd =50v, r g =25 ? , starting t j = 25c 4. i sd 6.0a, di/dt 200a/ s, v dd bv ds s , starting t j = 25c ? ther mal data 6N60 6n65 600 v to -220f 2.27 110 paramet er symbol rat ings unit t o -220 62.5 ito-220/to-220f 62.5 junctio n -to-am bient ja /w t o -220 1.00 3.20 junctio n -to-ca se jc /w 110 2.27 55 w to-263/d pak to-262/i pak 2 2 to-263/d pak to-262/i pak 2 2 to-263/d pak to-262/i pak 2 2 ito-220/to-220f a l l d a t a s h e e t
power m o sfet 6N60 6n65 3 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 6N60 6n65 ? electrical ch ara cteristics (t j = 25 , unless oth e r w is e specifi ed) parameter symbol t est conditions min typ max unit off cha r acteristics v drain-source breakd o wn voltage 6n65 bv dss v gs = 0v , i d = 250 a 650 v drain-source l eaka ge current i dss v ds = 600v, v gs = 0v 10 a forw ard v gs = 30v, v ds = 0v 100 na gate-source leaka ge curr ent reverse i gss v gs = -30v, v ds = 0v -100 na breakdo w n voltage temperature coefficient bv dss /t j i d = 250 a, referenc ed to 25c 0.53 v/ on cha r acteristics gate th reshold voltag e v gs(t h) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-so urce on-state resistanc e r ds(on) v gs = 10v, i d =3.0a 1.5 ? dyna m ic characteristics input cap a cita nce c iss 770 1000 pf output capacitance c oss 95 120 pf reverse tr ansfer capac itance c rss v ds =25v, v gs =0v,f =1 mhz 10 13 pf switching c h a r a c teris t ics tu rn-on delay time t d (on) 20 50 ns t u rn-on rise t i me t r 70 150 ns tu rn-off delay time t d(off) 40 90 ns tu rn-off fall time t f v dd =300v, i d =6.0 a, r g =2 5 ? (note 1, 2) 45 100 ns to tal gate charge q g 20 25 nc gate-source charg e q gs 4.9 nc gate-drain charge q gd v ds =480v, v gs =10v, i d =6.0 a (note 1, 2) 9.4 nc dra i n-source diode characteristics drain-s ource diod e f o r w ard voltage v sd v gs = 0 v , i sd = 6.0 a 1.4 v continuo us dr ain-source current i sd 6.2 a pulse d drai n-s ource c u rrent i sm 24.8 a reverse recovery t ime t rr 290 ns reverse recovery charge q rr v gs = 0 v , i sd = 6.0a, di/dt = 100 a/ s (note1) 2.35 c notes: 1. pulse t est: pulse width 300 s, duty c ycle 2% 2. essentia ll y in d epe nde nt of op eratin g temper ature 600 6n65 a l l d a t a s h e e t
power m o sfet ? test circ uits and wave for ms same type as d.u.t. l v dd drive r v gs r g - v ds d.u.t. + * d v/d t co ntroll ed by r g * i sd co ntr ol l ed by pulse period * d.u. t.-d evice under test p. w. period d= v gs ( d river) i sd (d .u .t. ) i fm , bo dy dio de fo rwa rd current di/dt i rm bod y d iod e reverse current body di ode recovery dv/dt body dio de forward voltage drop v dd 10 v v ds (d.u.t. ) - + v gs = p.w. period f i g. 1a peak diode recovery dv/dt test circuit f i g. 1b peak diode recovery dv/dt waveforms 6N60 6n65 4 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 6N60 6n65 a l l d a t a s h e e t
power m o sfet ? test circ uits and wave for ms (cont.) fig. 2a switching test circuit fi g. 2 b switching waveforms f ig . 3a gate charge test circuit fig. 3b gate charge waveform d.u. t. r d 10 v v ds l v dd t p v dd t p time bv dss i as i d(t ) v ds (t ) fig. 4 a unclamped inductive switching test circuit fi g. 4 b unclamped inductive switching waveforms 6N60 6n65 5 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 6N60 6n65 a l l d a t a s h e e t
power m o sfet 6N60 6n65 6 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 6N60 6n65 ? typical charact e ristics drain current,i d (a) drain current, i d (a) drain current,i d (a) drain current,i d (a) a l l d a t a s h e e t
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